focused ion beam system with a scanning electron microscope strata 400s Search Results


scanning electron microscope fei helios nanolab 400s  (NanoLab Inc)
90
NanoLab Inc scanning electron microscope fei helios nanolab 400s
Scanning Electron Microscope Fei Helios Nanolab 400s, supplied by NanoLab Inc, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
https://www.bioz.com/product/focused+ion+beam+system+with+a+scanning+electron+microscope+strata+400s/focused+ion+beam/pmc06263674-93-13-14
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scanning electron microscope fei helios nanolab 400s - by Bioz Stars, 2026-10
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transmission electron microscopy tem  (JEOL)
99
JEOL transmission electron microscopy tem
Transmission Electron Microscopy Tem, supplied by JEOL, used in various techniques. Bioz Stars score: 99/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
https://www.bioz.com/product/focused+ion+beam+system+with+a+scanning+electron+microscope+strata+400s/JEOL-IDES_Products+Transmission+Electron+Microscope/10__1016_slash_j__ijhydene__2020__08__015-85-5-9
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transmission electron microscopy tem - by Bioz Stars, 2026-10
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scanning electron microscopy sem  (Hitachi Ltd)
99
Hitachi Ltd scanning electron microscopy sem
Properties of a transparent inverted-structure OPD with a BHJ (DM-2,9-DMQA:SubPc ratio = 1:1, thickness = 90 nm) (a, b). (a) Transmittance of the device both experimentally measured and calculated by optical simulation using the n and k values of the BHJ. The red dots represent experimental values and the shaded area represents light absorption by the BHJ. (b) EQE curves of B, G, and R PDs. The EQEs of the B and R regions were measured in the underlying Si PDs, on which the B or R colour filters and the transparent G OPD were physically stacked. The EQE of the transparent G OPD was measured directly at an operating voltage of 3 V. Actual organic-on-Si hybrid CMOS colour image sensors (c–f). (c) <t>Cross-sectional</t> <t>TEM</t> and <t>SEM</t> (inset) images of the hybrid CMOS colour image sensor array of G OPD pixels. The B and R colour filters and the CMOS circuit with Si PDs are located under the bottom ITO array. (d) Output signal as a function of light intensity in G OPD pixels at a bias of 3 V. (e) Thermal stability of the output signal under illumination at 120 lux and in the dark state in G OPD pixels at a bias of 3 V. (f) A full-colour image acquired using a camera integrated with a 5-megapixel organic-on-Si hybrid CMOS colour image sensor.
Scanning Electron Microscopy Sem, supplied by Hitachi Ltd, used in various techniques. Bioz Stars score: 99/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
https://www.bioz.com/product/focused+ion+beam+system+with+a+scanning+electron+microscope+strata+400s/SU8600/pmc04289892-73-8-12
Average 99 stars, based on 1 article reviews
scanning electron microscopy sem - by Bioz Stars, 2026-10
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pp3010t cryogenic scanning electron microscopy  (Quorum Technologies)
98
Quorum Technologies pp3010t cryogenic scanning electron microscopy
Properties of a transparent inverted-structure OPD with a BHJ (DM-2,9-DMQA:SubPc ratio = 1:1, thickness = 90 nm) (a, b). (a) Transmittance of the device both experimentally measured and calculated by optical simulation using the n and k values of the BHJ. The red dots represent experimental values and the shaded area represents light absorption by the BHJ. (b) EQE curves of B, G, and R PDs. The EQEs of the B and R regions were measured in the underlying Si PDs, on which the B or R colour filters and the transparent G OPD were physically stacked. The EQE of the transparent G OPD was measured directly at an operating voltage of 3 V. Actual organic-on-Si hybrid CMOS colour image sensors (c–f). (c) <t>Cross-sectional</t> <t>TEM</t> and <t>SEM</t> (inset) images of the hybrid CMOS colour image sensor array of G OPD pixels. The B and R colour filters and the CMOS circuit with Si PDs are located under the bottom ITO array. (d) Output signal as a function of light intensity in G OPD pixels at a bias of 3 V. (e) Thermal stability of the output signal under illumination at 120 lux and in the dark state in G OPD pixels at a bias of 3 V. (f) A full-colour image acquired using a camera integrated with a 5-megapixel organic-on-Si hybrid CMOS colour image sensor.
Pp3010t Cryogenic Scanning Electron Microscopy, supplied by Quorum Technologies, used in various techniques. Bioz Stars score: 98/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
https://www.bioz.com/product/focused+ion+beam+system+with+a+scanning+electron+microscope+strata+400s/PP3010+Cryo+Sample+Preparation+System/pm36749718-359-31-30
Average 98 stars, based on 1 article reviews
pp3010t cryogenic scanning electron microscopy - by Bioz Stars, 2026-10
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uh5700  (Hitachi Ltd)
99
Hitachi Ltd uh5700
Properties of a transparent inverted-structure OPD with a BHJ (DM-2,9-DMQA:SubPc ratio = 1:1, thickness = 90 nm) (a, b). (a) Transmittance of the device both experimentally measured and calculated by optical simulation using the n and k values of the BHJ. The red dots represent experimental values and the shaded area represents light absorption by the BHJ. (b) EQE curves of B, G, and R PDs. The EQEs of the B and R regions were measured in the underlying Si PDs, on which the B or R colour filters and the transparent G OPD were physically stacked. The EQE of the transparent G OPD was measured directly at an operating voltage of 3 V. Actual organic-on-Si hybrid CMOS colour image sensors (c–f). (c) <t>Cross-sectional</t> <t>TEM</t> and <t>SEM</t> (inset) images of the hybrid CMOS colour image sensor array of G OPD pixels. The B and R colour filters and the CMOS circuit with Si PDs are located under the bottom ITO array. (d) Output signal as a function of light intensity in G OPD pixels at a bias of 3 V. (e) Thermal stability of the output signal under illumination at 120 lux and in the dark state in G OPD pixels at a bias of 3 V. (f) A full-colour image acquired using a camera integrated with a 5-megapixel organic-on-Si hybrid CMOS colour image sensor.
Uh5700, supplied by Hitachi Ltd, used in various techniques. Bioz Stars score: 99/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
https://www.bioz.com/product/focused+ion+beam+system+with+a+scanning+electron+microscope+strata+400s/UH5700/custom%40uh5700%4035072364
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uh5700 - by Bioz Stars, 2026-10
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cross-sectional transmission electron microscopy (tem) sample  (NanoLab Inc)
90
NanoLab Inc cross-sectional transmission electron microscopy (tem) sample
Properties of a transparent inverted-structure OPD with a BHJ (DM-2,9-DMQA:SubPc ratio = 1:1, thickness = 90 nm) (a, b). (a) Transmittance of the device both experimentally measured and calculated by optical simulation using the n and k values of the BHJ. The red dots represent experimental values and the shaded area represents light absorption by the BHJ. (b) EQE curves of B, G, and R PDs. The EQEs of the B and R regions were measured in the underlying Si PDs, on which the B or R colour filters and the transparent G OPD were physically stacked. The EQE of the transparent G OPD was measured directly at an operating voltage of 3 V. Actual organic-on-Si hybrid CMOS colour image sensors (c–f). (c) <t>Cross-sectional</t> <t>TEM</t> and <t>SEM</t> (inset) images of the hybrid CMOS colour image sensor array of G OPD pixels. The B and R colour filters and the CMOS circuit with Si PDs are located under the bottom ITO array. (d) Output signal as a function of light intensity in G OPD pixels at a bias of 3 V. (e) Thermal stability of the output signal under illumination at 120 lux and in the dark state in G OPD pixels at a bias of 3 V. (f) A full-colour image acquired using a camera integrated with a 5-megapixel organic-on-Si hybrid CMOS colour image sensor.
Cross Sectional Transmission Electron Microscopy (Tem) Sample, supplied by NanoLab Inc, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
https://www.bioz.com/product/focused+ion+beam+system+with+a+scanning+electron+microscope+strata+400s/transmission+electron+microscopy+samples/pm29897082-74-12-22
Average 90 stars, based on 1 article reviews
cross-sectional transmission electron microscopy (tem) sample - by Bioz Stars, 2026-10
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6360 lv scanning electron microscope  (JEOL)
96
JEOL 6360 lv scanning electron microscope
Properties of a transparent inverted-structure OPD with a BHJ (DM-2,9-DMQA:SubPc ratio = 1:1, thickness = 90 nm) (a, b). (a) Transmittance of the device both experimentally measured and calculated by optical simulation using the n and k values of the BHJ. The red dots represent experimental values and the shaded area represents light absorption by the BHJ. (b) EQE curves of B, G, and R PDs. The EQEs of the B and R regions were measured in the underlying Si PDs, on which the B or R colour filters and the transparent G OPD were physically stacked. The EQE of the transparent G OPD was measured directly at an operating voltage of 3 V. Actual organic-on-Si hybrid CMOS colour image sensors (c–f). (c) <t>Cross-sectional</t> <t>TEM</t> and <t>SEM</t> (inset) images of the hybrid CMOS colour image sensor array of G OPD pixels. The B and R colour filters and the CMOS circuit with Si PDs are located under the bottom ITO array. (d) Output signal as a function of light intensity in G OPD pixels at a bias of 3 V. (e) Thermal stability of the output signal under illumination at 120 lux and in the dark state in G OPD pixels at a bias of 3 V. (f) A full-colour image acquired using a camera integrated with a 5-megapixel organic-on-Si hybrid CMOS colour image sensor.
6360 Lv Scanning Electron Microscope, supplied by JEOL, used in various techniques. Bioz Stars score: 96/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
https://www.bioz.com/product/focused+ion+beam+system+with+a+scanning+electron+microscope+strata+400s/JSM-6360_6360LV+Scanning+Electron+Microscope/pm19447406-69-2-1
Average 96 stars, based on 1 article reviews
6360 lv scanning electron microscope - by Bioz Stars, 2026-10
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confocal raman spectroscopy  (Oxford Instruments)
99
Oxford Instruments confocal raman spectroscopy
Properties of a transparent inverted-structure OPD with a BHJ (DM-2,9-DMQA:SubPc ratio = 1:1, thickness = 90 nm) (a, b). (a) Transmittance of the device both experimentally measured and calculated by optical simulation using the n and k values of the BHJ. The red dots represent experimental values and the shaded area represents light absorption by the BHJ. (b) EQE curves of B, G, and R PDs. The EQEs of the B and R regions were measured in the underlying Si PDs, on which the B or R colour filters and the transparent G OPD were physically stacked. The EQE of the transparent G OPD was measured directly at an operating voltage of 3 V. Actual organic-on-Si hybrid CMOS colour image sensors (c–f). (c) <t>Cross-sectional</t> <t>TEM</t> and <t>SEM</t> (inset) images of the hybrid CMOS colour image sensor array of G OPD pixels. The B and R colour filters and the CMOS circuit with Si PDs are located under the bottom ITO array. (d) Output signal as a function of light intensity in G OPD pixels at a bias of 3 V. (e) Thermal stability of the output signal under illumination at 120 lux and in the dark state in G OPD pixels at a bias of 3 V. (f) A full-colour image acquired using a camera integrated with a 5-megapixel organic-on-Si hybrid CMOS colour image sensor.
Confocal Raman Spectroscopy, supplied by Oxford Instruments, used in various techniques. Bioz Stars score: 99/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
https://www.bioz.com/product/focused+ion+beam+system+with+a+scanning+electron+microscope+strata+400s/alpha300/10__1016_slash_j__rinp__2023__106321-35-18-21
Average 99 stars, based on 1 article reviews
confocal raman spectroscopy - by Bioz Stars, 2026-10
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nanomill model 1040  (NanoLab Inc)
90
NanoLab Inc nanomill model 1040
Properties of a transparent inverted-structure OPD with a BHJ (DM-2,9-DMQA:SubPc ratio = 1:1, thickness = 90 nm) (a, b). (a) Transmittance of the device both experimentally measured and calculated by optical simulation using the n and k values of the BHJ. The red dots represent experimental values and the shaded area represents light absorption by the BHJ. (b) EQE curves of B, G, and R PDs. The EQEs of the B and R regions were measured in the underlying Si PDs, on which the B or R colour filters and the transparent G OPD were physically stacked. The EQE of the transparent G OPD was measured directly at an operating voltage of 3 V. Actual organic-on-Si hybrid CMOS colour image sensors (c–f). (c) <t>Cross-sectional</t> <t>TEM</t> and <t>SEM</t> (inset) images of the hybrid CMOS colour image sensor array of G OPD pixels. The B and R colour filters and the CMOS circuit with Si PDs are located under the bottom ITO array. (d) Output signal as a function of light intensity in G OPD pixels at a bias of 3 V. (e) Thermal stability of the output signal under illumination at 120 lux and in the dark state in G OPD pixels at a bias of 3 V. (f) A full-colour image acquired using a camera integrated with a 5-megapixel organic-on-Si hybrid CMOS colour image sensor.
Nanomill Model 1040, supplied by NanoLab Inc, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
https://www.bioz.com/product/focused+ion+beam+system+with+a+scanning+electron+microscope+strata+400s/nanomill+model+1040/pm38126781-122-36-31
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temcam-xf416(r) cmos camera  (TVIPS GmbH)
90
TVIPS GmbH temcam-xf416(r) cmos camera
Properties of a transparent inverted-structure OPD with a BHJ (DM-2,9-DMQA:SubPc ratio = 1:1, thickness = 90 nm) (a, b). (a) Transmittance of the device both experimentally measured and calculated by optical simulation using the n and k values of the BHJ. The red dots represent experimental values and the shaded area represents light absorption by the BHJ. (b) EQE curves of B, G, and R PDs. The EQEs of the B and R regions were measured in the underlying Si PDs, on which the B or R colour filters and the transparent G OPD were physically stacked. The EQE of the transparent G OPD was measured directly at an operating voltage of 3 V. Actual organic-on-Si hybrid CMOS colour image sensors (c–f). (c) <t>Cross-sectional</t> <t>TEM</t> and <t>SEM</t> (inset) images of the hybrid CMOS colour image sensor array of G OPD pixels. The B and R colour filters and the CMOS circuit with Si PDs are located under the bottom ITO array. (d) Output signal as a function of light intensity in G OPD pixels at a bias of 3 V. (e) Thermal stability of the output signal under illumination at 120 lux and in the dark state in G OPD pixels at a bias of 3 V. (f) A full-colour image acquired using a camera integrated with a 5-megapixel organic-on-Si hybrid CMOS colour image sensor.
Temcam Xf416(r) Cmos Camera, supplied by TVIPS GmbH, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
https://www.bioz.com/product/focused+ion+beam+system+with+a+scanning+electron+microscope+strata+400s/f416+cmos+camera/10__1017_slash_S1431927621010771-28-36-37
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f-2700  (Hitachi Ltd)
99
Hitachi Ltd f-2700
Properties of a transparent inverted-structure OPD with a BHJ (DM-2,9-DMQA:SubPc ratio = 1:1, thickness = 90 nm) (a, b). (a) Transmittance of the device both experimentally measured and calculated by optical simulation using the n and k values of the BHJ. The red dots represent experimental values and the shaded area represents light absorption by the BHJ. (b) EQE curves of B, G, and R PDs. The EQEs of the B and R regions were measured in the underlying Si PDs, on which the B or R colour filters and the transparent G OPD were physically stacked. The EQE of the transparent G OPD was measured directly at an operating voltage of 3 V. Actual organic-on-Si hybrid CMOS colour image sensors (c–f). (c) <t>Cross-sectional</t> <t>TEM</t> and <t>SEM</t> (inset) images of the hybrid CMOS colour image sensor array of G OPD pixels. The B and R colour filters and the CMOS circuit with Si PDs are located under the bottom ITO array. (d) Output signal as a function of light intensity in G OPD pixels at a bias of 3 V. (e) Thermal stability of the output signal under illumination at 120 lux and in the dark state in G OPD pixels at a bias of 3 V. (f) A full-colour image acquired using a camera integrated with a 5-megapixel organic-on-Si hybrid CMOS colour image sensor.
F 2700, supplied by Hitachi Ltd, used in various techniques. Bioz Stars score: 99/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
https://www.bioz.com/product/focused+ion+beam+system+with+a+scanning+electron+microscope+strata+400s/F-2700/custom%40f-2700%4010%2E1016%2Fj%2Ejorganchem%2E2014%2E08%2E030
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stat-i 400 s  (Metrohm AG)
90
Metrohm AG stat-i 400 s
Properties of a transparent inverted-structure OPD with a BHJ (DM-2,9-DMQA:SubPc ratio = 1:1, thickness = 90 nm) (a, b). (a) Transmittance of the device both experimentally measured and calculated by optical simulation using the n and k values of the BHJ. The red dots represent experimental values and the shaded area represents light absorption by the BHJ. (b) EQE curves of B, G, and R PDs. The EQEs of the B and R regions were measured in the underlying Si PDs, on which the B or R colour filters and the transparent G OPD were physically stacked. The EQE of the transparent G OPD was measured directly at an operating voltage of 3 V. Actual organic-on-Si hybrid CMOS colour image sensors (c–f). (c) <t>Cross-sectional</t> <t>TEM</t> and <t>SEM</t> (inset) images of the hybrid CMOS colour image sensor array of G OPD pixels. The B and R colour filters and the CMOS circuit with Si PDs are located under the bottom ITO array. (d) Output signal as a function of light intensity in G OPD pixels at a bias of 3 V. (e) Thermal stability of the output signal under illumination at 120 lux and in the dark state in G OPD pixels at a bias of 3 V. (f) A full-colour image acquired using a camera integrated with a 5-megapixel organic-on-Si hybrid CMOS colour image sensor.
Stat I 400 S, supplied by Metrohm AG, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
https://www.bioz.com/product/focused+ion+beam+system+with+a+scanning+electron+microscope+strata+400s/stat+i+400s/pm37420685-56-19-1
Average 90 stars, based on 1 article reviews
stat-i 400 s - by Bioz Stars, 2026-10
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Image Search Results


Properties of a transparent inverted-structure OPD with a BHJ (DM-2,9-DMQA:SubPc ratio = 1:1, thickness = 90 nm) (a, b). (a) Transmittance of the device both experimentally measured and calculated by optical simulation using the n and k values of the BHJ. The red dots represent experimental values and the shaded area represents light absorption by the BHJ. (b) EQE curves of B, G, and R PDs. The EQEs of the B and R regions were measured in the underlying Si PDs, on which the B or R colour filters and the transparent G OPD were physically stacked. The EQE of the transparent G OPD was measured directly at an operating voltage of 3 V. Actual organic-on-Si hybrid CMOS colour image sensors (c–f). (c) Cross-sectional TEM and SEM (inset) images of the hybrid CMOS colour image sensor array of G OPD pixels. The B and R colour filters and the CMOS circuit with Si PDs are located under the bottom ITO array. (d) Output signal as a function of light intensity in G OPD pixels at a bias of 3 V. (e) Thermal stability of the output signal under illumination at 120 lux and in the dark state in G OPD pixels at a bias of 3 V. (f) A full-colour image acquired using a camera integrated with a 5-megapixel organic-on-Si hybrid CMOS colour image sensor.

Journal: Scientific Reports

Article Title: Organic-on-silicon complementary metal–oxide–semiconductor colour image sensors

doi: 10.1038/srep07708

Figure Lengend Snippet: Properties of a transparent inverted-structure OPD with a BHJ (DM-2,9-DMQA:SubPc ratio = 1:1, thickness = 90 nm) (a, b). (a) Transmittance of the device both experimentally measured and calculated by optical simulation using the n and k values of the BHJ. The red dots represent experimental values and the shaded area represents light absorption by the BHJ. (b) EQE curves of B, G, and R PDs. The EQEs of the B and R regions were measured in the underlying Si PDs, on which the B or R colour filters and the transparent G OPD were physically stacked. The EQE of the transparent G OPD was measured directly at an operating voltage of 3 V. Actual organic-on-Si hybrid CMOS colour image sensors (c–f). (c) Cross-sectional TEM and SEM (inset) images of the hybrid CMOS colour image sensor array of G OPD pixels. The B and R colour filters and the CMOS circuit with Si PDs are located under the bottom ITO array. (d) Output signal as a function of light intensity in G OPD pixels at a bias of 3 V. (e) Thermal stability of the output signal under illumination at 120 lux and in the dark state in G OPD pixels at a bias of 3 V. (f) A full-colour image acquired using a camera integrated with a 5-megapixel organic-on-Si hybrid CMOS colour image sensor.

Article Snippet: Cross-sectional transmission electron microscopy (TEM) (Tecnai G2ST) and scanning electron microscopy (SEM) (Hitachi SU-8030) images were acquired using the focused ion beam (FIB) (Helios NanoLab 400S) milling technique.

Techniques: